A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
| ISBN: | 9783662486795 |
| Publication date: | 1st February 2016 |
| Author: | Jiandong Sun |
| Publisher: | Springer an imprint of Springer Berlin Heidelberg |
| Format: | Hardback |
| Pagination: | 126 pages |
| Series: | Springer Theses |
| Genres: |
Electronics engineering Electronic devices and materials Condensed matter physics (liquid state and solid state physics) Laser physics |
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
Field-Effect Self-Mixing Terahertz Detectors features in the following genres: Electronics engineering, Electronic devices and materials, Condensed matter physics (liquid state and solid state physics), Laser physics
Field-Effect Self-Mixing Terahertz Detectors is available in Hardback
Field-Effect Self-Mixing Terahertz Detectors was written by Jiandong Sun and published by Springer an imprint of Springer Berlin Heidelberg
Field-Effect Self-Mixing Terahertz Detectors has 126 pages
Yes it is part of Springer Theses series