This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
| ISBN: | 9783031171987 |
| Publication date: | 7th December 2022 |
| Author: | Reet Chaudhuri |
| Publisher: | Springer International Publishing AG |
| Format: | Hardback |
| Pagination: | 255 pages |
| Series: | Springer Theses |
| Genres: |
Electronic devices and materials Condensed matter physics (liquid state and solid state physics) |
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
Integrated Electronics on Aluminum Nitride features in the following genres: Electronic devices and materials, Condensed matter physics (liquid state and solid state physics)
Integrated Electronics on Aluminum Nitride is available in Hardback
Integrated Electronics on Aluminum Nitride was written by Reet Chaudhuri and published by Springer International Publishing AG
Integrated Electronics on Aluminum Nitride has 255 pages
Yes it is part of Springer Theses series
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