GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students.
| ISBN: | 9780323998710 |
| Publication date: | 22nd May 2024 |
| Author: | Yogesh Singh Chauhan, Ahtisham Ul Haq Pampori, Sheikh Aamir Ahsan |
| Publisher: | Woodhead Publishing an imprint of Elsevier Science |
| Format: | Paperback |
| Pagination: | 425 pages |
| Series: | Woodhead Publishing Series in Electronic and Optical Materials |
| Genres: |
Manufacturing industries Materials science Electronics engineering |
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students.
GaN Transistor Modeling for RF and Power Electronics features in the following genres: Manufacturing industries, Materials science, Electronics engineering
GaN Transistor Modeling for RF and Power Electronics is available in Paperback
GaN Transistor Modeling for RF and Power Electronics was written by Yogesh Singh Chauhan, Ahtisham Ul Haq Pampori, Sheikh Aamir Ahsan and published by Woodhead Publishing an imprint of Elsevier Science
GaN Transistor Modeling for RF and Power Electronics has 425 pages
Yes it is part of Woodhead Publishing Series in Electronic and Optical Materials series