Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
| ISBN: | 9780081025840 |
| Publication date: | 18th June 2019 |
| Author: | Yoshio Stanford University, USA Nishi |
| Publisher: | Woodhead Publishing Ltd an imprint of Elsevier Science & Technology |
| Format: | Paperback |
| Pagination: | 662 pages |
| Series: | Woodhead Publishing Series in Electronic and Optical Materials |
| Genres: |
Electronics engineering Systems analysis and design Electricity, electromagnetism and magnetism Materials science |
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
Advances in Non-volatile Memory and Storage Technology features in the following genres: Electronics engineering, Systems analysis and design, Electricity, electromagnetism and magnetism, Materials science
Advances in Non-volatile Memory and Storage Technology is available in Paperback
Advances in Non-volatile Memory and Storage Technology was written by Yoshio Stanford University, USA Nishi and published by Woodhead Publishing Ltd an imprint of Elsevier Science & Technology
Advances in Non-volatile Memory and Storage Technology has 662 pages
Yes it is part of Woodhead Publishing Series in Electronic and Optical Materials series