Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
| ISBN: | 9780081024300 |
| Publication date: | 29th March 2019 |
| Author: | Uwe Deputy Scientific Director, Nanoelectronic Materials Laboratory, NaMLab, Dresden, Germany Schroeder |
| Publisher: | Woodhead Publishing Ltd an imprint of Elsevier Science & Technology |
| Format: | Paperback |
| Pagination: | 570 pages |
| Series: | Woodhead Publishing Series in Electronic and Optical Materials |
| Genres: |
Materials science Electronics engineering Electrochemistry and magnetochemistry |
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
Ferroelectricity in Doped Hafnium Oxide features in the following genres: Materials science, Electronics engineering, Electrochemistry and magnetochemistry
Ferroelectricity in Doped Hafnium Oxide is available in Paperback
Ferroelectricity in Doped Hafnium Oxide was written by Uwe Deputy Scientific Director, Nanoelectronic Materials Laboratory, NaMLab, Dresden, Germany Schroeder and published by Woodhead Publishing Ltd an imprint of Elsevier Science & Technology
Ferroelectricity in Doped Hafnium Oxide has 570 pages
Yes it is part of Woodhead Publishing Series in Electronic and Optical Materials series