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Wide Bandgap Semiconductor Power Devices

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Wide Bandgap Semiconductor Power Devices Synopsis

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

About This Edition

ISBN: 9780081023068
Publication date:
Author: B Jayant Distinguished University Professor, North Carolina State University, Raleigh, NC, USA Baliga
Publisher: Woodhead Publishing Ltd an imprint of Elsevier Science & Technology
Format: Paperback
Pagination: 418 pages
Series: Woodhead Publishing Series in Electronic and Optical Materials
Genres: Electronic devices and materials
Electronics engineering
Materials science

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