Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures.
Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
| ISBN: | 9781107408548 |
| Publication date: | 5th June 2014 |
| Author: | B J Pawlak |
| Publisher: | Cambridge University Press |
| Format: | Paperback |
| Pagination: | 336 pages |
| Series: | MRS Proceedings |
| Genres: |
Materials science Electronic devices and materials |
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures.
Doping Engineering for Front-End Processing: Volume 1070 features in the following genres: Materials science, Electronic devices and materials
Paperback. £24.30, down from the £27.00 cover price. Not Available.
Doping Engineering for Front-End Processing: Volume 1070 was written by B J Pawlak and published by Cambridge University Press
Doping Engineering for Front-End Processing: Volume 1070 has 336 pages
Yes it is part of MRS Proceedings series
£24.30, reduced from £27.00. Not Available.