Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods.
Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
| ISBN: | 9780471430797 |
| Publication date: | 13th December 2002 |
| Author: | E H Nicollian, J R Brews |
| Publisher: | Wiley-Interscience an imprint of Wiley |
| Format: | Paperback |
| Pagination: | 906 pages |
| Series: | Wiley Classics Library |
| Genres: |
Electronics and communications engineering |
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface.
MOS (Metal Oxide Semiconductor) Physics and Technology features in the following genres: Electronics and communications engineering
Paperback. £143.96, down from the £159.95 cover price. Not Available.
MOS (Metal Oxide Semiconductor) Physics and Technology was written by E H Nicollian, J R Brews and published by Wiley-Interscience an imprint of Wiley
MOS (Metal Oxide Semiconductor) Physics and Technology has 906 pages
Yes it is part of Wiley Classics Library series
£143.96, reduced from £159.95. Not Available.