Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
| ISBN: | 9783642270185 |
| Publication date: | 27th November 2013 |
| Author: | Koichiro Ishibashi, Kenichi Osada |
| Publisher: | Springer an imprint of Springer Berlin Heidelberg |
| Format: | Paperback |
| Pagination: | 144 pages |
| Series: | Springer Series in Advanced Microelectronics |
| Genres: |
Electronics engineering Engineering: general |
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology.
Low Power and Reliable SRAM Memory Cell and Array Design features in the following genres: Electronics engineering, Engineering: general
Paperback, Hardback. Not Available.
Low Power and Reliable SRAM Memory Cell and Array Design was written by Koichiro Ishibashi, Kenichi Osada and published by Springer an imprint of Springer Berlin Heidelberg
Low Power and Reliable SRAM Memory Cell and Array Design has 144 pages
Yes it is part of Springer Series in Advanced Microelectronics series