Carrier Transport in Nanoscale MOS Transistors Synopsis
A comprehensive advanced level examination of the transport theory of nanoscale devices
Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
