Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation.
They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
| ISBN: | 9780792366867 |
| Publication date: | 31st December 2000 |
| Author: | Gianfranco Pacchioni, Linards Skuja, David L Griscom |
| Publisher: | Springer an imprint of Springer Netherlands |
| Format: | Paperback |
| Pagination: | 624 pages |
| Series: | NATO Science Series II: Mathematics, Physics and Chemistry |
| Genres: |
Testing of materials Condensed matter physics (liquid state and solid state physics) |
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation.
Defects in SiO2 and Related Dielectrics features in the following genres: Testing of materials, Condensed matter physics (liquid state and solid state physics)
Paperback. Not Available.
Defects in SiO2 and Related Dielectrics was written by Gianfranco Pacchioni, Linards Skuja, David L Griscom and published by Springer an imprint of Springer Netherlands
Defects in SiO2 and Related Dielectrics has 624 pages
Yes it is part of NATO Science Series II: Mathematics, Physics and Chemistry series