This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
| ISBN: | 9780367573553 |
| Publication date: | 30th June 2020 |
| Author: | Sudeb Dasgupta, Brajesh Kumar Indian Institute of Technology Roorkee, Uttareakhand, India Kaushik, Pankaj Kumar Indian Pal |
| Publisher: | CRC Press an imprint of Taylor & Francis Ltd |
| Format: | Paperback |
| Pagination: | 138 pages |
| Genres: |
Electronics: circuits and components Electronics engineering Nanotechnology Electronics: circuits and components Nanotechnology |