Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.
| ISBN: | 9789812778819 |
| Publication date: | 3rd April 2008 |
| Author: | Takashi (Tohoku Univ, Japan) Nakamura, Eishi (Hitachi Ltd, Japan) Ibe, Mamoru (Tohoku Univ, Japan) Baba, Yasuo (Hitachi Yahagi |
| Publisher: | World Scientific Publishing Co Pte Ltd |
| Format: | Hardback |
| Pagination: | 368 pages |
| Genres: |
Storage media and peripherals |