LoveReading

Becoming a member of the LoveReading community is free.

No catches, no fine print just unadulterated book loving, with your favourite books saved to your own digital bookshelf.

New members get entered into our monthly draw to win £100 to spend in your local bookshop Plus lots lots more…

Find out more

Heteroepitaxy of Semiconductors

by John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael

Heteroepitaxy of Semiconductors Synopsis

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Book Information

ISBN: 9780367655808
Publication date: 30th September 2020
Author: John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael
Publisher: CRC Press an imprint of Taylor & Francis Ltd
Format: Paperback / softback
Pagination: 643 pages
Categories: Circuits & components, Optical physics, Electronics engineering,

About John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.

More About John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael

Share this book