Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells. Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.
An interdisciplinary work offering an introduction to the basic principles and operational characteristics of semiconductor sensors. Describes sensor technology, stressing bulk and surface micromachining. Considers a sensor group related to a special physical, chemical or biological input signal. The final chapter deals with integrated sensors. Each chapter includes a summary, problem sets and a discussion of future sensor trends.
Introduces the physical principles and operational characteristics of high speed semiconductor devices. Intended for use by advanced students as well as professional engineers and scientists involved in semiconductor device research, it includes the most advanced and important topics in high speed semiconductor devices. Initial chapters cover material properties, advanced technologies and novel device building blocks, and serve as the basis for understanding and analyzing devices in subsequent chapters. The following chapters cover a group of closely related devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable--base transistors, hot electron transistors, microwave diodes and photonic devices, among others. Each chapter is self--contained and features a summary section, a discussion of future device trend, and an instructional problem set.